SI3456CDV-T1-GE3
RoHS

SI3456CDV-T1-GE3

SI3456CDV-T1-GE3

Vishay

MOSFET N-CH 30V 7.7A 6TSOP

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SI3456CDV-T1-GE3

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Specification
Vgs(th) (Max) @ Id3V @ 250µA
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Supplier Device Package6-TSOP
SeriesTrenchFET®
Rds On (Max) @ Id, Vgs34 mOhm @ 6.1A, 10V
Power Dissipation (Max)2W (Ta), 3.3W (Tc)
PackagingTape & Reel (TR)
Package / CaseSOT-23-6 Thin, TSOT-23-6
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Moisture Sensitivity Level (MSL)1 (Unlimited)
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds460pF @ 15V
Gate Charge (Qg) (Max) @ Vgs12nC @ 10V
FET TypeN-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Drain to Source Voltage (Vdss)30V
Detailed DescriptionN-Channel 30V 7.7A (Tc) 2W (Ta), 3.3W (Tc) Surface Mount 6-TSOP
Current - Continuous Drain (Id) @ 25°C7.7A (Tc)