SI2371EDS-T1-GE3
RoHS

SI2371EDS-T1-GE3

SI2371EDS-T1-GE3

Vishay

MOSFET P-CH 30V 4.8A SOT-23

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SI2371EDS-T1-GE3

Availability: 32976 pieces
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Specification
RoHSCompliant
MountSurface Mount
Height1.12 mm
Fall Time62 ns
Lead FreeLead Free
PackagingDigi-Reel®
Rise Time65 ns
REACH SVHCNo SVHC
Rds On Max45 mΩ
Resistance45 mΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Case/PackageSOT-23
Number of Pins3
Power Dissipation1 W
Threshold Voltage-1.5 V
Number of Channels1
Number of Elements1
Turn-On Delay Time7 ns
Radiation HardeningNo
Turn-Off Delay Time47 ns
Element ConfigurationSingle
Max Power Dissipation1.7 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance37 mΩ
Gate to Source Voltage (Vgs)12 V
Continuous Drain Current (ID)-4.8 A
Max Junction Temperature (Tj)150 °C
Drain to Source Voltage (Vdss)-30 V
Drain to Source Breakdown Voltage-30 V