SI2367DS-T1-GE3
| Part No | SI2367DS-T1-GE3 |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET P-CH 20V 3.8A SOT-23 |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Spot quantity:
18162
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.452 | |
| 10 | 0.443 | |
| 100 | 0.4294 | |
| 1000 | 0.4158 | |
| 10000 | 0.3978 |
Specification
RoHSCompliant
MountSurface Mount
Weight1.437803 g
Fall Time9 ns
Lead FreeLead Free
Rise Time9 ns
REACH SVHCUnknown
Rds On Max66 mΩ
Resistance66 MΩ
Schedule B8541210080, 8541210080|8541210080|8541210080|8541210080|8541210080
Case/PackageSOT-23-3
Number of Pins3
Input Capacitance561 pF
Power Dissipation960 mW
Threshold Voltage-400 mV
Number of Channels1
Number of Elements1
Turn-On Delay Time8 ns
Radiation HardeningNo
Turn-Off Delay Time35 ns
Element ConfigurationSingle
Max Power Dissipation1.7 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance66 mΩ
Gate to Source Voltage (Vgs)8 V
Continuous Drain Current (ID)3.8 A
Drain to Source Voltage (Vdss)-20 V
