SI2333DS-T1-GE3
RoHS

SI2333DS-T1-GE3

SI2333DS-T1-GE3

Vishay

MOSFET P-CH 12V 4.1A SOT23-3

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SI2333DS-T1-GE3

Availability: 15975 pieces
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Specification
RoHSCompliant
MountSurface Mount
Weight1.437803 g
Fall Time60 ns
REACH SVHCUnknown
Rds On Max32 mΩ
Nominal Vgs-1 V
Case/PackageSOT-23-3
Number of Pins3
Input Capacitance1.1 nF
Threshold Voltage-1 V
Number of Channels1
Turn-On Delay Time25 ns
Radiation HardeningNo
Turn-Off Delay Time72 ns
Element ConfigurationSingle
Max Power Dissipation750 mW
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance32 mΩ
Gate to Source Voltage (Vgs)8 V
Continuous Drain Current (ID)4.1 A
Drain to Source Voltage (Vdss)-12 V