SI2308BDS-T1-E3
RoHS

SI2308BDS-T1-E3

SI2308BDS-T1-E3

Vishay

MOSFET N-CH 60V 2.3A SOT23-3

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SI2308BDS-T1-E3

Availability: 21065 pieces
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Specification
RoHSCompliant
MountSurface Mount
Width1.4 mm
Height1.02 mm
Length3.04 mm
Weight1.437803 g
Fall Time16 ns
Lead FreeLead Free
Rise Time16 ns
REACH SVHCUnknown
Rds On Max54 mΩ
Resistance156 MΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
Case/PackageSOT-23-3
Number of Pins3
Input Capacitance190 pF
Power Dissipation1.09 W
Threshold Voltage1 V
Number of Channels1
Number of Elements1
Turn-On Delay Time4 ns
Radiation HardeningNo
Turn-Off Delay Time10 ns
Element ConfigurationSingle
Max Power Dissipation1.14 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance130 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)1.9 A
Max Junction Temperature (Tj)150 °C
Drain to Source Voltage (Vdss)60 V
Drain to Source Breakdown Voltage60 V