Availability:
19672
pieces
Specification
Vgs(th) (Max) @ Id4V @ 250µA
Vgs (Max)±30V
TechnologyMOSFET (Metal Oxide)
Supplier Device PackageTO-247-3
Series-
Rds On (Max) @ Id, Vgs230 mOhm @ 13A, 10V
Power Dissipation (Max)277W (Tc)
PackagingTube
Package / CaseTO-247-3
Other Names*IRFP22N50A
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Moisture Sensitivity Level (MSL)1 (Unlimited)
Lead Free Status / RoHS StatusContains lead / RoHS non-compliant
Input Capacitance (Ciss) (Max) @ Vds3450pF @ 25V
Gate Charge (Qg) (Max) @ Vgs120nC @ 10V
FET TypeN-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)10V
Drain to Source Voltage (Vdss)500V
Detailed DescriptionN-Channel 500V 22A (Tc) 277W (Tc) Through Hole TO-247-3
Current - Continuous Drain (Id) @ 25°C22A (Tc)
