IRF620PBF
| Part No | IRF620PBF |
|---|---|
| Manufacturer | Vishay |
| Description | MOSFET N-CH 200V 5.2A TO-220AB |
| Datasheet | Download Datasheet |
| ECAD Module |
|
Spot quantity:
36366
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.017 | |
| 10 | 0.9967 | |
| 100 | 0.9661 | |
| 1000 | 0.9356 | |
| 10000 | 0.895 |
Specification
RoHSCompliant
MountThrough Hole
Width4.7 mm
Height9.01 mm
Length10.41 mm
Weight6.000006 g
Current52 A
Voltage200 V
Fall Time13 ns
Lead FreeLead Free
PackagingBulk
Rise Time22 ns
REACH SVHCUnknown
Rds On Max800 mΩ
Resistance800 mΩ
Schedule B8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|85
Nominal Vgs2 V
Case/PackageTO-220AB
Recovery Time300 ns
Current Rating5.2 A
Number of Pins3
Input Capacitance260 pF
Power Dissipation50 W
Threshold Voltage2 V
Number of Channels1
Number of Elements1
Turn-On Delay Time7.2 ns
Radiation HardeningNo
Turn-Off Delay Time19 ns
Voltage Rating (DC)250 V
Element ConfigurationSingle
Max Power Dissipation50 W
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance800 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)5.2 A
Max Junction Temperature (Tj)150 °C
Drain to Source Voltage (Vdss)200 V
Drain to Source Breakdown Voltage200 V
