Availability:
19410
pieces
Specification
Vgs(th) (Max) @ Id2.6V @ 1mA
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Supplier Device PackageATPAK
Series-
Rds On (Max) @ Id, Vgs43 mOhm @ 13A, 10V
Power Dissipation (Max)48W (Tc)
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Other NamesNVATS5A112PLZT4G-ND
NVATS5A112PLZT4GOSTR
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Moisture Sensitivity Level (MSL)1 (Unlimited)
Manufacturer Standard Lead Time10 Weeks
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds1450pF @ 20V
Gate Charge (Qg) (Max) @ Vgs33.5nC @ 10V
FET TypeP-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Drain to Source Voltage (Vdss)60V
Detailed DescriptionP-Channel 60V 27A (Ta) 48W (Tc) Surface Mount ATPAK
Current - Continuous Drain (Id) @ 25°C27A (Ta)
