Availability:
16563
pieces
Specification
Vgs(th) (Max) @ Id2.5V @ 250µA
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Supplier Device Package8-SOIC
Series-
Rds On (Max) @ Id, Vgs85 mOhm @ 3.05A, 10V
Power Dissipation (Max)730mW (Ta)
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154", 3.90mm Width)
Other NamesNTMS3P03R2OS
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Moisture Sensitivity Level (MSL)1 (Unlimited)
Lead Free Status / RoHS StatusContains lead / RoHS non-compliant
Input Capacitance (Ciss) (Max) @ Vds750pF @ 24V
Gate Charge (Qg) (Max) @ Vgs25nC @ 10V
FET TypeP-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Drain to Source Voltage (Vdss)30V
Detailed DescriptionP-Channel 30V 2.34A (Ta) 730mW (Ta) Surface Mount 8-SOIC
Current - Continuous Drain (Id) @ 25°C2.34A (Ta)
