Availability:
17305
pieces
Specification
Vgs(th) (Max) @ Id3V @ 250µA
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Supplier Device Package8-SOIC
Series-
Rds On (Max) @ Id, Vgs95 mOhm @ 3A, 10V
Power Dissipation (Max)770mW (Ta)
PackagingCut Tape (CT)
Package / Case8-SOIC (0.154", 3.90mm Width)
Other NamesNTMD4184PFR2GOSCT
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Moisture Sensitivity Level (MSL)1 (Unlimited)
Manufacturer Standard Lead Time9 Weeks
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds360pF @ 10V
Gate Charge (Qg) (Max) @ Vgs4.2nC @ 4.5V
FET TypeP-Channel
FET FeatureSchottky Diode (Isolated)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Drain to Source Voltage (Vdss)30V
Detailed DescriptionP-Channel 30V 2.3A (Ta) 770mW (Ta) Surface Mount 8-SOIC
Current - Continuous Drain (Id) @ 25°C2.3A (Ta)
