Availability:
18646
pieces
Specification
Vgs(th) (Max) @ Id2V @ 250µA
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Supplier Device PackageI-PAK
Series-
Rds On (Max) @ Id, Vgs5.2 mOhm @ 20A, 10V
Power Dissipation (Max)1.25W (Ta), 78.1W (Tc)
PackagingTube
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Moisture Sensitivity Level (MSL)1 (Unlimited)
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds2050pF @ 20V
Gate Charge (Qg) (Max) @ Vgs17.7nC @ 5V
FET TypeN-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Drain to Source Voltage (Vdss)24V
Detailed DescriptionN-Channel 24V 12A (Ta), 85A (Tc) 1.25W (Ta), 78.1W (Tc) Through Hole I-PAK
Current - Continuous Drain (Id) @ 25°C12A (Ta), 85A (Tc)
