MMSF3P02HDR2G
RoHS

MMSF3P02HDR2G

MMSF3P02HDR2G

onsemi

MOSFET P-CH 20V 5.6A 8SOIC

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MMSF3P02HDR2G

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Specification
Vgs(th) (Max) @ Id2V @ 250µA
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Supplier Device Package8-SOIC
Series-
Rds On (Max) @ Id, Vgs75 mOhm @ 3A, 10V
Power Dissipation (Max)2.5W (Ta)
PackagingTape & Reel (TR)
Package / Case8-SOIC (0.154", 3.90mm Width)
Other NamesMMSF3P02HDR2GOS MMSF3P02HDR2GOS-ND MMSF3P02HDR2GOSTR
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Moisture Sensitivity Level (MSL)1 (Unlimited)
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds1400pF @ 16V
Gate Charge (Qg) (Max) @ Vgs46nC @ 10V
FET TypeP-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Drain to Source Voltage (Vdss)20V
Detailed DescriptionP-Channel 20V 5.6A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
Current - Continuous Drain (Id) @ 25°C5.6A (Ta)