Availability:
18892
pieces
Specification
Vgs(th) (Max) @ Id4V @ 250µA
Vgs (Max)±25V
TechnologyMOSFET (Metal Oxide)
Supplier Device PackageTO-220F
SeriesQFET®
Rds On (Max) @ Id, Vgs23 mOhm @ 17.5A, 10V
Power Dissipation (Max)62W (Tc)
PackagingTube
Package / CaseTO-220-3 Full Pack
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Moisture Sensitivity Level (MSL)1 (Unlimited)
Manufacturer Standard Lead Time5 Weeks
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds3300pF @ 25V
Gate Charge (Qg) (Max) @ Vgs110nC @ 10V
FET TypeN-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)10V
Drain to Source Voltage (Vdss)100V
Detailed DescriptionN-Channel 100V 35A (Tc) 62W (Tc) Through Hole TO-220F
Current - Continuous Drain (Id) @ 25°C35A (Tc)
