Availability:
15368
pieces
Specification
Vgs(th) (Max) @ Id2V @ 250µA
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Supplier Device PackageTO-220F
SeriesQFET®
Rds On (Max) @ Id, Vgs52 mOhm @ 9A, 10V
Power Dissipation (Max)41W (Tc)
PackagingTube
Package / CaseTO-220-3 Full Pack
Other NamesFQPF33N10L-ND
FQPF33N10LFS
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Moisture Sensitivity Level (MSL)1 (Unlimited)
Manufacturer Standard Lead Time5 Weeks
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds1630pF @ 25V
Gate Charge (Qg) (Max) @ Vgs40nC @ 5V
FET TypeN-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Drain to Source Voltage (Vdss)100V
Detailed DescriptionN-Channel 100V 18A (Tc) 41W (Tc) Through Hole TO-220F
Current - Continuous Drain (Id) @ 25°C18A (Tc)
