Availability:
21343
pieces
Specification
Vgs(th) (Max) @ Id4V @ 250µA
Vgs (Max)±25V
TechnologyMOSFET (Metal Oxide)
Supplier Device PackageD-Pak
SeriesQFET®
Rds On (Max) @ Id, Vgs100 mOhm @ 7.8A, 10V
Power Dissipation (Max)2.5W (Ta), 50W (Tc)
PackagingCut Tape (CT)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Other NamesFQD19N10TMCT
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Moisture Sensitivity Level (MSL)1 (Unlimited)
Manufacturer Standard Lead Time16 Weeks
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds780pF @ 25V
Gate Charge (Qg) (Max) @ Vgs25nC @ 10V
FET TypeN-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)10V
Drain to Source Voltage (Vdss)100V
Detailed DescriptionN-Channel 100V 15.6A (Tc) 2.5W (Ta), 50W (Tc) Surface Mount D-Pak
Current - Continuous Drain (Id) @ 25°C15.6A (Tc)
