Availability:
16942
pieces
Specification
Vgs(th) (Max) @ Id5V @ 250µA
Vgs (Max)±30V
TechnologyMOSFET (Metal Oxide)
Supplier Device PackageTO-3P
SeriesQFET®
Rds On (Max) @ Id, Vgs1.5 Ohm @ 3.6A, 10V
Power Dissipation (Max)198W (Tc)
PackagingTube
Package / CaseTO-3P-3, SC-65-3
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Moisture Sensitivity Level (MSL)1 (Unlimited)
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds1850pF @ 25V
Gate Charge (Qg) (Max) @ Vgs52nC @ 10V
FET TypeN-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)10V
Drain to Source Voltage (Vdss)800V
Detailed DescriptionN-Channel 800V 7.2A (Tc) 198W (Tc) Through Hole TO-3P
Current - Continuous Drain (Id) @ 25°C7.2A (Tc)
