FDMS4435BZ
RoHS

FDMS4435BZ

FDMS4435BZ

onsemi

MOSFET P-CH 30V 9A/18A 8PQFN

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FDMS4435BZ

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Specification
Vgs(th) (Max) @ Id3V @ 250µA
Vgs (Max)±25V
TechnologyMOSFET (Metal Oxide)
Supplier Device Package8-PQFN (5x6)
SeriesPowerTrench®
Rds On (Max) @ Id, Vgs20 mOhm @ 9A, 10V
Power Dissipation (Max)2.5W (Ta), 39W (Tc)
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN
Other NamesFDMS4435BZ-ND FDMS4435BZTR
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Moisture Sensitivity Level (MSL)1 (Unlimited)
Manufacturer Standard Lead Time39 Weeks
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds2050pF @ 15V
Gate Charge (Qg) (Max) @ Vgs47nC @ 10V
FET TypeP-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Drain to Source Voltage (Vdss)30V
Detailed DescriptionP-Channel 30V 9A (Ta), 18A (Tc) 2.5W (Ta), 39W (Tc) Surface Mount 8-PQFN (5x6)
Current - Continuous Drain (Id) @ 25°C9A (Ta), 18A (Tc)