FCPF11N65
RoHS

FCPF11N65

FCPF11N65

onsemi

MOSFET N-CH 650V 11A TO220F

Download Datasheet

FCPF11N65

Availability: 19368 pieces
Request Quotation
Specification
Vgs(th) (Max) @ Id5V @ 250µA
TechnologyMOSFET (Metal Oxide)
Supplier Device PackageTO-220F
SeriesSuperFET™
Rds On (Max) @ Id, Vgs380 mOhm @ 5.5A, 10V
Power Dissipation (Max)36W (Tc)
PackagingTube
Package / CaseTO-220-3 Full Pack
Operating Temperature-
Mounting TypeThrough Hole
Moisture Sensitivity Level (MSL)1 (Unlimited)
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds1490pF @ 25V
Gate Charge (Qg) (Max) @ Vgs52nC @ 10V
FET TypeN-Channel
FET Feature-
Drain to Source Voltage (Vdss)650V
Detailed DescriptionN-Channel 650V 11A (Tc) 36W (Tc) Through Hole TO-220F
Current - Continuous Drain (Id) @ 25°C11A (Tc)