Availability:
19039
pieces
Specification
Vgs(th) (Max) @ Id3V @ 1mA
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Supplier Device PackageTO-92-3
Series-
Rds On (Max) @ Id, Vgs5 Ohm @ 500mA, 10V
Power Dissipation (Max)400mW (Ta)
PackagingBulk
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Moisture Sensitivity Level (MSL)1 (Unlimited)
Manufacturer Standard Lead Time27 Weeks
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds50pF @ 25V
FET TypeN-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Drain to Source Voltage (Vdss)60V
Detailed DescriptionN-Channel 60V 200mA (Tc) 400mW (Ta) Through Hole TO-92-3
Current - Continuous Drain (Id) @ 25°C200mA (Tc)
Base Part Number2N7000
